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Abstract

Techniques disclosed herein a method and system for coating the interior surfaces of microscale hole features fabricated into the substantially planar surface of a substrate. Techniques include creating a separation or smoothing layer between a nucleation layer process and a metallization or gapfill process. The addition of such a separation layer avoids dissolving a seed layer and gapfill complications from remnant organic material. Techniques include adding a conformal copper smoothing layer step after applying a direct on-barrier nucleation layer. The smoothing layer adds a sufficient thickness so that the gapfill chemistry does not erode the nucleation layer. The smoothing layer can also provide a high-purity copper film that will not detrimentally interact with the TSV gapfill chemistry. This smoothing layer can also provide a surface with consistent roughness to allow uniform adhesion of the organic additives in the TSV gapfill chemistry to create a filling profile that is void-free.

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First Claim