TRANSPARENT ELECTRODES FOR SEMICONDUCTOR THIN FILM DEVICES
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United States of America Patent
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Issued Date -
Aug 29, 2013
app pub date -
Jun 30, 2011
filing date -
Jun 30, 2010
priority date (Note) -
Abandoned
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Abstract
A method of producing a transparent electrode suitable for use in an organic semiconductor photovoltaic device. First and second silanes (3) are deposited from the vapour phase on a substrate (1) and bind to the surface of the substrate. A metal film (4) is then deposited from the vapour phase and binds to both the first and second silanes so as to produce a transparent metal layer having a thickness which is no greater than about 15 nanometres. The first silane is a non-amino functional silane and the second silane is an aminofunctional silane. The electrode may be flexible, using a polymer substrate (1). The metal film (4) may be provided with a plurality of apertures (5), provided for example by masking the substrate with microspheres (2) while depositing the metal and subsequently removing the microspheres, and/or annealing the metal so that apertures appear.
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