SEMICONDUCTOR STRUCTURES COMPRISING CRYSTALLINE PrCaMnO (PCMO) FORMED BY ATOMIC LAYER DEPOSITION
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United States of America Patent
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Apr 10, 2013
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Oct 12, 2010
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Abstract
Semiconductor structures include PrCaMnO (PCMO) material formed by atomic layer deposition. The PCMO material is formed by exposing a surface of a substrate to a manganese-containing precursor, an oxygen-containing precursor, a praseodymium-containing precursor and a calcium-containing precursor. The resulting PCMO material is crystalline.
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