HETEROGROWTH
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United States of America Patent
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Issued Date -
Aug 29, 2013
app pub date -
Oct 13, 2011
filing date -
Oct 13, 2010
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Abstract
A method comprises bonding a silicon wafer or silicon-on-insulator wafer having a monocrystalline silicon surface region and a wafer-like carrier comprising silicon carbide so as to form a composite wafer having a surface with the monocrystalline silicon surface region for silicon carbide heterogrowth, such as heteroepitaxy. The composite wafer can help avoid wafer bow.
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