METHOD FOR MAKING GATE-OXIDE WITH STEP-GRADED THICKNESS IN TRENCHED DMOS DEVICE FOR REDUCED GATE-TO-DRAIN CAPACITANCE
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United States of America Patent
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Feb 28, 2012
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Feb 28, 2012
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Abstract
A method for making gate-oxide with step-graded thickness (S-G GOX) in a trenched DMOS device is proposed. First, a substrate is provided and a silicon oxide-silicon nitride-silicon oxide (ONO) protective composite layer is formed atop. Second, an upper interim trench (UIT), an upper trench protection wall (UTPW) and a lower interim trench (LIT) are created into the substrate. Third, the substrate material surrounding the LIT is shaped and oxidized into a desired thick-oxide-layer of thickness T1 and depth D1. Fourth, previously formed UTPW is stripped off from the device in progress, then a thin-gate-oxide of thickness T2 where T2
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