SIDEWALL TEXTURING OF LIGHT EMITTING DIODE STRUCTURES
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United States of America Patent
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Issued Date -
Sep 12, 2013
app pub date -
Mar 9, 2012
filing date -
Mar 9, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A light emitting diode is made using a laser to texture the sidewalls of the bottom contact layer, without damaging a mesa. To do so, the substrate is mounted on a laser machining platform, and trenches are cut along lines through the semiconductor layer on the substrate using a first sequence of laser pulses having short pulse lengths that result in formation of textured sidewalls in the trenches, without causing recasting of the material. Then the substrate can be scribed along the lines of the trenches using a second sequence of laser pulses for singulation of die.
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