COMPOSITION FOR OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE USING THE SAME

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United States of America Patent

APP PUB NO 20130237011A1
SERIAL NO

13679311

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Abstract

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A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG DISPLAY CO LTD1 SAMSUNG-RO GIHEUNG-GU YONGIN-SI GYEONGGI-DO 17113
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY291 DAEHAK-RO YUSEONG-GU DAEJEON 34141

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BAE, Byeong-Soo Daejeon, KR 34 229
CHOI, Tae-Young Seoul, KR 56 372
HWANG, Young-Hwan Daejeon, KR 3 0
JEON, Jun-Hyuck Daejeon, KR 3 7
JEONG, Yeon-Taek Seoul, KR 8 44
JO, Kang-Moon Seoul, KR 18 103
JUNG, Seung-Ho Incheon, KR 60 324
KIM, Bo-Sung Seoul, KR 105 746
KIM, Doo-Na Seongnam-si, KR 12 16
LEE, Byung-Ju Gunpo-si, KR 2 0
LEE, Doo-Hyoung Suwon-si, KR 8 82
YANG, Chan-Woo Hwaseong-si, KR 7 24

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