EPITAXIAL STRUCTURES ON SIDES OF A SUBSTRATE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

13892051

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
JPMORGAN CHASE BANK NATIONAL ASSOCIATION10 S DEARBORN ST FLOOR 07 ATTN AWRI MCKEE CHICAGO IL 60603

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Siskavich, Brad M Amherst, US 4 2548

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation