Oxygen Containing Precursors for Photovoltaic Passivation
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United States of America Patent
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Issued Date -
Sep 26, 2013
app pub date -
Sep 11, 2012
filing date -
Sep 20, 2011
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Abandoned
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Abstract
Methods for depositing a passivation layer on a photovoltaic cell are disclosed. Methods include depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. The silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family of Si(OR1)xR2y, or from the family of SiRxHy, silane, and combinations thereof; wherein x+y=4, y≠4; R1 is C1-C8 alkyl; R2 is selected from the group consisting of hydrogen, C1-C8 alkyl, and NR*3; R is C1-C8 alkyl or NR*3; wherein R* can be hydrogen or C1-C8 alkyl; C1-C8 alkyl can be linear, branched or cyclic, the ligand can be saturated, unsaturated, or aromatic (for cyclic alkyl). Photovoltaic devices containing the passivation layers are also disclosed.
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