VARIABLE RESISTIVE ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
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United States of America Patent
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Issued Date -
Sep 26, 2013
app pub date -
Mar 22, 2013
filing date -
Mar 22, 2012
priority date (Note) -
Abandoned
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Abstract
As for a variable resistive element including first and second electrodes, and a variable resistor containing a metal oxide between the first and second electrodes, in a case where a current path having a locally high current density of a current flowing between the both electrodes is formed in the metal oxide, and resistivity of at least one specific electrode having higher resistivity of the both electrodes is 100 μΩcm or more, a dimension of a contact region of the specific electrode with the variable resistor in a short side or short axis direction is set to be more than 1.4 times as long as a film thickness of the specific electrode, which reduces variation in parasitic resistance generated in an electrode part due to process variation of the electrode, and prevents variation in resistance change characteristics of the variable resistive element generated due to the variation in parasitic resistance.
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