Nonvolatile semiconductor storage device and method of manufacture thereof
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United States of America Patent
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Feb 10, 2015
Grant Date -
Sep 26, 2013
app pub date -
Sep 7, 2012
filing date -
Mar 23, 2012
priority date (Note) -
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Abstract
A nonvolatile semiconductor storage device includes a semiconductor substrate on which an element isolation groove is formed, memory cells each including a gate electrode having a charge storage layer, an interelectrode insulating film, and a control electrode, that is formed on the semiconductor substrate via a tunnel insulating film, and an insulating film disposed in the element isolation groove. The interelectrode insulating film is formed to have a first portion above the insulating film that is separated from one of the insulating film and the control electrode by an air gap and a second portion above the charge storage layer that is separated from the charge storage layer by a cavity.
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