Techniques for drying and annealing thermoelectric powders
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United States of America Patent
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Issued Date -
Sep 26, 2013
app pub date -
Mar 25, 2013
filing date -
Mar 23, 2012
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Abandoned
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Abstract
Embodiments of the invention include a method of producing a low contaminant, stoichiometrically controlled semiconductor material, the method comprising providing a colloidal suspension of a plurality of colloidally grown semiconductor nanocrystals, providing an inorganic ligand structure around a surface of the semiconductor nanocrystals of the plurality of semiconductor nanocrystals, drying the colloidal suspension into a powder, and pre-annealing the powder into a semiconductor material.
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