PATTERNING METHOD
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United States of America Patent
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Issued Date -
Sep 26, 2013
app pub date -
Dec 16, 2011
filing date -
Dec 17, 2010
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Provided is a patterning method that can greatly reduce process costs and environmental load. The patterning method includes: a film forming step of forming a functional film (2) on a substrate (1) ; and an etching step of irradiating the substrate with vacuum ultraviolet light (12) from above a mask (4) that is placed on the functional film (2) and has an arbitrarily-defined opening (4A) so as to dry etch the functional film (2) positioned below the opening (4A). The dry etching step can be carried out in an atmosphere containing oxygen. For example, dry air can be used as process gas. In addition, N2 may be supplied as an inert gas to the substrate (1) placed in the atmosphere.
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