GROUP III NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
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United States of America Patent
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Issued Date -
Oct 3, 2013
app pub date -
Apr 2, 2012
filing date -
Apr 2, 2012
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Abstract
A group III nitride-based high electron mobility transistor (HEMT) is disclosed. The group III nitride-based high electron mobility transistor (HEMT) comprises sequentially a substrate, a GaN buffer layer, a GaN channel layer, a AlN spacer layer, a barrier layer, a GaN cap layer, and a delta doped layer inserted between the AlN spacer layer and the barrier layer. The HEMT structure of the present invention can improve the electron mobility and concentration of the two-dimensional electron gas, while keeping a low contact resistance.
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