Susceptor For Improved Epitaxial Wafer Flatness
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United States of America Patent
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Issued Date -
Oct 10, 2013
app pub date -
Apr 10, 2012
filing date -
Apr 10, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A susceptor for supporting a semiconductor wafer during an epitaxial chemical vapor deposition process, the susceptor defining a wafer diameter, the susceptor includes a substantially cylindrical body portion having opposing upper and lower surfaces. The body portion has a diameter larger than the wafer diameter. The susceptor includes a set of holes circumferentially disposed at a first susceptor diameter, the set of holes is evenly spaced with respect to adjacent holes and extending through the upper and lower surfaces in an area. The first susceptor diameter is larger than the wafer diameter, and holes are omitted along the first diameter in a predetermined orientation.
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