Method for producing a semiconductor layer sequence, radiation-emitting semiconductor chip and optoelectronic component
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United States of America Patent
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May 10, 2016
Grant Date -
Oct 10, 2013
app pub date -
Sep 30, 2011
filing date -
Oct 15, 2010
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Abstract
A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.
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