FIELD-EFFECT TRANSISTOR, PROCESS FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
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United States of America Patent
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app pub date -
Jun 24, 2013
filing date -
Dec 22, 2010
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Abandoned
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Abstract
The invention relates to a bottom-contact type field-effect transistor which comprises: a substrate; a source electrode 3 and a drain electrode 4 that have been formed over the substrate and are constituted of an inexpensive metal; and an organic semiconductor layer 6 having an annulene structure, wherein an oxide film does not exist on a surface of at least one of the source electrode 3 and the drain electrode 4, which is in contact with the organic semiconductor layer 6, and a process for producing the field-effect transistor and an electronic device.
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