METHOD FOR FORMING HEAT SINK WITH THROUGH SILICON VIAS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 24, 2013
app pub date -
Apr 23, 2012
filing date -
Apr 23, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Semiconductor devices are formed with through silicon vias extending into the semiconductor substrate from a backside surface for improved heat dissipation. Embodiments include forming a cavity in a backside surface of a substrate, the substrate including a gate stack on a frontside surface, and filling the cavity with a thermally conductive material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully