APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR

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United States of America Patent

APP PUB NO 20130280896A1
SERIAL NO

13824383

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Abstract

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To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions.

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Patent Owner(s)

Patent OwnerAddress
JNC CORPORATION2-1 OTEMACHI 2-CHOME CHIYODA-KU TOKYO 100-8105
TOHO TITANIUM CO LTD3-5 CHIGASAKI 3-CHOME CHIGASAKI-SHI KANAGAWA 253-8510
JX NIPPON MINING & METALS CORPORATIONTOKYO 105-8417

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohkubo, Shuichi Ibaraki, JP 59 241
Yamaguchi, Masatsugu Ibaraki, JP 6 43

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