RESISTANCE-SWITCHING MEMORY CELLS HAVING REDUCED METAL MIGRATION AND LOW CURRENT OPERATION AND METHODS OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Nov 7, 2013
app pub date -
May 7, 2012
filing date -
May 7, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In some aspects, a memory cell is provided that includes a steering element, a metal-insulator-metal (“MIM”) stack coupled in series with the steering element, and a conductor above the MIM stack. The MIM stack includes a resistance switching element and a top electrode disposed on the resistance switching element, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer between the MIM stack and the conductor. Numerous other aspects are provided.
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