METHOD AND APPARATUS FOR UTILIZING CONTACT-SIDEWALL CAPACITANCE IN A SINGLE POLY NON-VOLATILE MEMORY CELL
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United States of America Patent
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Issued Date -
Nov 7, 2013
app pub date -
May 3, 2012
filing date -
May 3, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An approach for utilizing electrical capacitance between a plurality of contacts and sidewalls to provide voltage coupling between a floating gate (FG) and a control gate (CG) is disclosed. Embodiments include providing an FG and a CG laterally separated from each other; coupling a plurality of parallel polysilicon lines to the FG; providing a plurality of contacts between the plurality of the parallel polysilicon lines and coupling the contacts to the CG; and forming an electrical capacitance between the plurality of contacts and sidewalls of the plurality of parallel polysilicon lines to provide voltage coupling between the CG and the FG.
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