LOCALIZED DEVICE
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United States of America Patent
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Issued Date -
Nov 14, 2013
app pub date -
May 11, 2012
filing date -
May 11, 2012
priority date (Note) -
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status (Latency Note)
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Abstract
A device is disclosed. The device includes a gate disposed on a substrate in a device region, the gate having first and second sidewalls. The gate includes a gate electrode and a resistive layer disposed between the gate electrode and substrate. First doped regions of a first polarity type are disposed in the substrate adjacent to the first and second sidewalls of the gate. The gate overlaps the first doped regions by a first distance to form overlap portions. A portion of the resistive layer between the gate electrode and overlap portions form first and second storage elements of a multi-bit resistive memory cell.
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