PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS

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United States of America Patent

SERIAL NO

13963212

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Abstract

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Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.

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Patent Owner(s)

Patent OwnerAddress
NOVELLUS SYSTEMS INCSAN JOSE CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Hu Tualatin, US 59 7128
Lavoie, Adrien Tualatin, US 181 14683
Li, Ming West Linn, US 1161 12455
Sriram, Mandyam San Jose, US 73 6522

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