SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20130320540A1
SERIAL NO

13488208

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Abstract

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A semiconductor device includes a substrate, a conductive material, and a material layer. The substrate includes a through hole. The conductive material fills the through hole. The material layer is formed in the conductive material, wherein an electrical resistance of the conductive material is lower than an electrical resistance of the material layer.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHIU, Yu Shan New Taipei City, TW 2 6
Liang, Wen Ping New Taipei City, TW 1 1

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