NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND METHOD OF MAKING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 12, 2013
app pub date -
Sep 6, 2012
filing date -
Jun 7, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A normally-off transistor includes a channel layer, an electron supply layer overlaying the channel layer, a source electrode and a drain electrode on the electron supply layer, an area in the electrode supply layer between the source electrode and the drain electrode treated with a fluoride based plasma followed by a chlorine based plasma treatment, a gate insulator overlaying the area, and a gate electrode overlaying the gate insulator.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully