PHOTODIODE WITH REDUCED DEAD-LAYER REGION
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United States of America Patent
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Issued Date -
Dec 19, 2013
app pub date -
Jun 18, 2012
filing date -
Jun 18, 2012
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Abandoned
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Abstract
A photodiode structure having an illuminated front-side surface and a back-side surface includes a front-side doped layer having a first conductivity type, a back-side doped layer having the first conductivity type, a front-side active cell region made sensitive to light by the action of at least one plug region formed in the front-side doped layer having a second conductivity type, and a front-side inactive cell region substantially insensitive to light, wherein the first and second conductivity types are opposite conductivity types.
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