LEAD-FREE GLASS FOR SEMICONDUCTOR ENCAPSULATION AND ENCAPSULATOR FOR SEMICONDUCTOR ENCAPSULATION

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United States of America Patent

APP PUB NO 20130345042A1
SERIAL NO

13882893

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Abstract

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The present invention provides a lead-free glass for semiconductor encapsulation, which can encapsulate semiconductor devices at a low temperature, has an excellent acid durability and hardly precipitates crystals when forming a glass tube, and an encapsulator for semiconductor encapsulation made of the glass. The glass comprises, as a glass composition, from 45 to 58% of SiO2, from 0 to 6% of Al2O3, from 14.5 to 30% of B2O3, from 0 to 3% of MgO, from 0 to 3% of CaO, from 4.2 to 14.2% of ZnO, from 5 to 12% of Li2O, from 0 to 15% of Na2O, from 0 to 7% of K2O, from 15 to 30% of Li2O+Na2O+K2O, and from 0.1 to 8% of TiO2, in terms of % by mol, wherein a ratio of ZnO to Li2O is in the range from 0.84 to 2.

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Patent Owner(s)

Patent OwnerAddress
NIPPON ELECTRIC GLASS CO LTD7-1 SEIRAN 2-CHOME OTSU-SHI SHIGA 520-8639

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Koichi Shiga, JP 146 1953
Kondo, Kumiko Shiga, JP 18 66

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