COPPER INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THEREOF
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United States of America Patent
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Issued Date -
Jan 2, 2014
app pub date -
Jun 27, 2012
filing date -
Jun 27, 2012
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a copper interconnect structure is disclosed. A substrate having a conductive region is provided. An insulating layer with a via opening is formed on the substrate. The via opening exposes the conductive region. A copper layer is formed on the first insulating layer and fills the via opening by sequentially performing deposition and reflowing processes. A masking layer is formed on the copper layer to cover the via opening. The copper layer uncovered by the masking layer is anisotropically oxidized. The masking layer and the oxidized copper layer are removed by a wet etching process, to form a copper plug in the via opening and a copper wire line on the copper plug. A copper interconnect structure is also disclosed.
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