BODY-GATE COUPLING TO REDUCE DISTORTION IN RADIO-FREQUENCY SWITCH
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United States of America Patent
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Issued Date -
Jan 9, 2014
app pub date -
Jul 6, 2013
filing date -
Jul 7, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Radio-frequency (RF) switch circuits are disclosed having one or more transistors coupled to provide improved harmonic management. The RF switch circuits including at least one field-effect transistor (FET) disposed between first and second nodes, each of the at least one FET having a respective body and gate. A coupling circuit can be configured to couple the respective body and gate of each of the at least one FET. The coupling circuit can include a capacitor electrically parallel with a diode.
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