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United States of America Patent
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N/A
Issued Date -
Jan 16, 2014
app pub date -
Mar 13, 2013
filing date -
Jul 16, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The embodiments disclose a method for an electron curing reverse-tone process, including depositing an etch-resistant layer onto a patterned imprinted resist layer fabricated onto a hard mask layer deposited onto a substrate, curing the etch-resistant layer using an electron beam dose during etching processes of imprinted pattern features into the hard mask and into the substrate and using analytical processes to quantify reduced pattern feature placement drift errors and to quantify increased pattern feature size uniformity of imprinted pattern features etched.
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