Adaptive reading of a resistive memory

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United States of America Patent

PATENT NO 9111613
APP PUB NO 20140016396A1
SERIAL NO

13939234

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Abstract

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An adaptive reading and programming method is presented for resistive memory. The core operating principle is to cause a change in the conductance of a resistive memory cell and measure the magnitude of the change. The magnitude of change can be used to determine the logic state of the resistive memory cell. The proposed methods are evaluated in simulation programs with integrated circuit emphasis and a hand analysis model is extracted to help explain the sources of power and energy consumption.

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Patent OwnerAddress
THE REGENTS OF THE UNIVERSITY OF MICHIGAN1600 HURON PARKWAY 2ND FLOOR ANN ARBOR MI 48109

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ebong, Idongesit Ann Arbor, US 1 8
Mazumder, Pinaki Ann Arbor, US 13 273

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