USING AN INTERCONNECT BUMP TO TRAVERSE THROUGH A PASSIVATION LAYER OF A SEMICONDUCTOR DIE
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United States of America Patent
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Issued Date -
Jan 23, 2014
app pub date -
Jul 23, 2013
filing date -
Jul 23, 2012
priority date (Note) -
Abandoned
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Abstract
A semiconductor die, which includes a first semiconductor device, a first passivation layer, and a first interconnect bump, is disclosed. The first passivation layer is over the first semiconductor device, which includes a first group of device fingers. The first interconnect bump is thermally and electrically connected to each of the first group of device fingers. Additionally, the first interconnect bump protrudes through a first opening in the first passivation layer.
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