Non-volatile semiconductor memory device and readout method thereof
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United States of America Patent
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Sep 2, 2014
Grant Date -
Jan 23, 2014
app pub date -
Nov 15, 2012
filing date -
Jul 18, 2012
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Abstract
A non-volatile semiconductor device includes: memory strings formed by series connection of memory cells respectively connected to word lines, wherein each memory string is connected between a bit line and a source line via first and second select gate transistors; and a control circuit controlling the first and second select gate transistors, such that when voltage of the word line is raised to a predetermined value for data readout from the memory cell, a first status where the first select gate transistor is turned on and the second select gate transistor is turned off and second status where the first select gate transistor is turned off and the second select gate transistor is turned on are generated alternately.
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