Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same
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United States of America Patent
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Feb 24, 2015
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Oct 9, 2013
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Aug 3, 2010
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Abstract
Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.
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