MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE
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United States of America Patent
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Issued Date -
Feb 6, 2014
app pub date -
Aug 2, 2012
filing date -
Aug 2, 2012
priority date (Note) -
Abandoned
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Abstract
An exemplary memory device includes a substrate and two word lines extending on the substrate. The substrate includes an active area. The two word lines are formed on the active area. Each word line includes a recessed portion corresponding to the active area. The recessed portion is defined by a planar top surface.
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