PATTERNING OF HARD-TO-DRY-ETCH SUBSTRATES

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United States of America Patent

APP PUB NO 20140037920A1
SERIAL NO

13564637

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A hard-to-dry-etch material may be patterned by forming a layer of dry-etchable material on a surface of the hard-to-dry etch substrate, and dry etching the dry-etchable material. The hard-to-dry etch substrate produces substantial quantities of non-volatile etch byproducts that redeposit when subject to the dry etching. The dry-etchable material has similar material properties to the hard-to-dry-etch substrate material is formed. The dry-etchable material is one that does not produce substantial quantities of non-volatile etch byproducts that redeposit when the dry-etchable material is subject to the dry etching. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

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Patent Owner(s)

Patent OwnerAddress
ROLITH INC5880 W LAS POSITAS BOULEVARD SUITE 51 PLEASANTON CA 94588

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kobrin, Boris Dublin, US 77 1968

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