CONTACTS FOR SEMICONDUCTOR DEVICES
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United States of America Patent
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app pub date -
Oct 21, 2013
filing date -
Oct 20, 2006
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Abandoned
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Abstract
A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.
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