SINGLE-WALLED CARBON NANOTUBE (SWCNT) FABRICATION BY CONTROLLED CHEMICAL VAPOR DEPOSITION (CVD)
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United States of America Patent
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Issued Date -
Feb 13, 2014
app pub date -
Aug 10, 2012
filing date -
Aug 10, 2012
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Abandoned
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Abstract
The system and method disclosed herein provide a predetermined, variable volume argon-hydrogen gas mixture for a chemical vapor deposition (CVD)-based process, which enables the growth of single-walled carbon nanotube (SWCNT) structures. The exemplary SWCNT structures of this system and method are fabricated with a degree of control over the field emissions produced by the SWCNT and the range of diameters of each of the SWCNTs. Specifically, the predetermined diameter ranges and the field emissions of the SWCNT structure corresponds to a predetermined range of concentrations of the argon-hydrogen mixture and the argon concentration respectively. The defects and the diameter of the SWCNTs typically contribute to field emissions from the SWCNT structures at low applied voltages.
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