FORMING A TAPERED OXIDE FROM A THICK OXIDE LAYER
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United States of America Patent
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Issued Date -
Feb 13, 2014
app pub date -
Aug 10, 2012
filing date -
Aug 10, 2012
priority date (Note) -
Abandoned
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Abstract
Processes for forming a tapered field plate dielectric in a semiconductor substrate are provided. The process may be used to form a variety of types of devices, such as Schottky diodes, HVFETs, JFET, IGBT, bipolar transistors, and the like. The process may include etching a trench in a semiconductor wafer, depositing an insulating layer on the semiconductor wafer to form a gap within the trench, depositing a masking layer on the insulating layer, and alternatingly etching the masking layer and the insulating layer to form a tapered field plate dielectric region.
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