SUBSTRATE COMPRISING SI-BASE AND INAS-LAYER
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United States of America Patent
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Issued Date -
Feb 20, 2014
app pub date -
Apr 27, 2012
filing date -
Apr 29, 2011
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a substrate (5) comprising a Si-base (1) and an InAs-layer (4) provided on said Si-base where said InAs-layer (4) has a thickness between 100 and 500 nanometers and root-mean-square roughness of the upper surface of said InAs-layer (4) is below 1 nanometer. The invention further relates to a method for forming said substrate. The invention also relates to growing InAs-nanowires (7) as well as a GaSb-layer (17) on said substrate (5).
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