MULTI-TIME PROGRAMMABLE MEMORY
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United States of America Patent
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Issued Date -
Feb 20, 2014
app pub date -
Aug 20, 2012
filing date -
Aug 20, 2012
priority date (Note) -
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Abstract
A device is disclosed. The device includes a substrate and a fin structure disposed on the substrate. The fin structure serves as a common body of n transistors. The transistors include separate charge storage layers and gate dielectric layers. The charge storage layers are disposed over a top surface of the fin structure and the gate dielectric layers are disposed on sidewalls of the fin structure. n=2x, x is a whole number greater or equal to 1. A transistor can interchange between a select transistor and a storage transistor.
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