METHOD FOR FABRICATING A VERTICAL LIGHT EMITTING DIODE (VLED) DIE HAVING EPITAXIAL STRUCTURE WITH PROTECTIVE LAYER
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United States of America Patent
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app pub date -
Oct 28, 2013
filing date -
Oct 11, 2006
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Abandoned
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Abstract
A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer; and forming a mirror on the p-doped layer, with the electrically insulative insulation layer configured to protect the epitaxial structure during formation of the mirror.
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