METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Feb 20, 2014
app pub date -
Aug 9, 2013
filing date -
Aug 17, 2012
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing a semiconductor device includes forming a first insulating film above a semiconductor substrate, patterning the first insulating film to form a first and a second opening, forming a first sidewall film on side walls of the first and the second openings, etching the semiconductor substrate with the first insulating film and the first sidewall film as a mask to dig down the first opening and the second opening, removing the first sidewall film to form a first offset portion in the first opening and a second offset portion in the second opening, the first and the second offset portion including a part of a surface of the semiconductor substrate, and etching a bottom of the first opening with the first insulating film as a mask.
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