ANTI SPACER PROCESS AND SEMICONDUCTOR STRUCTURE GENERATED BY THE ANTI SPACER PROCESS
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United States of America Patent
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Issued Date -
Feb 27, 2014
app pub date -
Aug 23, 2012
filing date -
Aug 23, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An anti spacer process, which comprises: (a) providing a resist layer including a non-uniform shape; (b) coating a target layer above the resist layer; (c) providing anti spacer trenches (spa) between the target layer and the resist layer; and (d) connecting at least part of the anti spacer trenches (spa) together to isolate a first part of the target layer and a second part of the target layer.
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