Method for Producing an Optoelectronic Semiconductor Chip
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United States of America Patent
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Issued Date -
Feb 27, 2014
app pub date -
Feb 15, 2012
filing date -
Mar 3, 2011
priority date (Note) -
Abandoned
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Abstract
A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner.
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