Memory Device with Charge Trap

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United States of America Patent

SERIAL NO

14076415

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Abstract

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A memory cell system is provided forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming an intermediate layer over the charge trap layer, and forming a second insulator layer with the intermediate layer.

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Patent Owner(s)

Patent OwnerAddress
MORGAN STANLEY SENIOR FUNDING INC1300 THAMES STREET 4TH FLOOR BALTIMORE MD 21231

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Kuo-Tung Saratoga, US 118 2714
Ding, Meng Sunnyvale, US 47 349
Joshi, Amol Ramesh Sunnyvale, US 18 72
Orimoto, Takashi Sunnyvale, US 50 703
Xue, Lei Sunnyvale, US 106 279

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