Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM Device Applications
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United States of America Patent
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Issued Date -
Mar 6, 2014
app pub date -
Aug 29, 2012
filing date -
Aug 29, 2012
priority date (Note) -
Abandoned
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Abstract
A magnetic thin film deposition is patterned and protected from oxidation during subsequent processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN. The SiN layer is then itself protected during the processing by a metal overlayer, preferably of Ta, Al, TiN, TaN or W. A sequence of low pressure plasma etches, using Oxygen, Cl2, BCl3 and C2H4 chemistries provide selectivity of the metal overlayer to various oxide layers and to the photo-resist hard masks used in patterning and metal layer and thereby allow the formation of bit lines while maintaining the integrity of the SiN layer.
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