GOLD BONDING IN SEMICONDUCTOR DEVICES USING POROUS GOLD
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United States of America Patent
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Issued Date -
Mar 6, 2014
app pub date -
Sep 5, 2012
filing date -
Sep 5, 2012
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Abandoned
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Abstract
A method of manufacturing comprising providing a semiconductor layer having metal adhesion layer on a planar surface of the semiconductor layer and an alloy layer on the metal adhesion layer, the alloy layer comprising an alloy of gold and a non-gold metal. The method comprises removing a portion of the non-gold metal from the alloy layer to form a porous gold layer. The method comprises applying pressure between the porous gold layer and a metal layer to form a bond between the semiconductor layer and the metal layer.
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