Work function tailoring for nonvolatile memory applications
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United States of America Patent
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Nov 3, 2015
Grant Date -
Mar 6, 2014
app pub date -
Nov 13, 2013
filing date -
Jun 9, 2011
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Abstract
Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.
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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
INTERMOLECULAR INC | CALIFORNIA USA CALIFORNIA |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chiang, Tony P | Campbell, US | 208 | 9984 |
Hashim, Imran | Saratoga, US | 125 | 2660 |
Wang, Yun | San Jose, US | 444 | 6545 |
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