METHOD OF MANUFACTURING MOLD FOR NANO-IMPRINT AND SUBSTRATE FABRICATING METHOD

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United States of America Patent

APP PUB NO 20140065834A1
SERIAL NO

14005671

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Abstract

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Provided is a method of manufacturing a mold for nano-imprint, for forming a projection/recess pattern on a surface of a silicon substrate, including: etching a substrate to form the projection/recess pattern on the surface of the silicon substrate by applying dry-etching to the silicon substrate using a hard mask pattern as a mask, in a state of covering the surface of the silicon substrate with the hard mask pattern made of a chromium-based material; and applying dry-etching to the silicon substrate in etching the substrate using a fluorine-based gas as a reactive gas of an etching gas used for the dry-etching applied to the silicon substrate, and adding an inert gas to the etching gas.

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Patent Owner(s)

Patent OwnerAddress
HOYA CORPORATIONTOKYO 161-8525

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kishimoto, Shuji Shinjuku-ku, JP 3 9

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